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  october 2011 doc id 17171 rev 4 1/15 15 STD44N4LF6 n-channel 40 v, 8.9 m ? , 44 a dpak stripfet? vi deepgate? power mosfet features 100% avalanche tested logic level drive applications switching applications automotive description this device is an n-channel power mosfet developed using the 6th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max i d STD44N4LF6 40 v 12.5 m ? 44 a dpak 1 3 !-v $4!"or ' 3 table 1. device summary order code marking package packaging STD44N4LF6 44n4lf6 dpak tape and reel www.st.com
contents STD44N4LF6 2/15 doc id 17171 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD44N4LF6 electrical ratings doc id 17171 rev 4 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 44 a i d drain current (continuous) at t c = 100 c 31 a i dm (1) 1. pulse is rated according soa drain current (pulsed) 176 a p tot total dissipation at t c = 25 c 50 w derating factor 0.33 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance ju nction-case max 3 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch 2 , 2 oz cu. 50 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current 20 a e as (1) 1. starting tj = 25 c, i d = i av , v dd = 24 v single pulse avalanche energy 150 mj
electrical characteristics STD44N4LF6 4/15 doc id 17171 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0 i d = 250 a 40 - v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v,tc = 125 c - 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v - 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 - 2.5 v r ds(on) static drain-source on resistance v gs = 5 v, i d = 20 a v gs = 10 v, i d = 20 a 11.3 8.9 18 12.5 m ? table 6. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 v - 1190 200 110 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 40 a v gs = 10 v (see figure 14 ) - 22 5 4.3 - nc nc nc r g intrinsic gate resistance f = 1 mhz open drain - 3.1 - ? table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 20 a, r g = 4.7 ?, v gs = 10 v (see figure 15 ) - 8.5 45 - ns ns t d(off) t f turn-off delay time fall time - 30 8 - ns ns
STD44N4LF6 electrical characteristics doc id 17171 rev 4 5/15 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 44 176 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 40 a, di/dt = 100 a/s, v dd = 32 v, t j = 150 c (see figure 17 ) - 25 25 2 ns nc a
electrical characteristics STD44N4LF6 6/15 doc id 17171 rev 4 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0 8 90 3 v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 2 8 0dpb i d 60 40 20 0 0 2 v d s (v) (a) 1 3 8 0 100 5v 6v 3 v v g s =10v 4v 120 140 160 1 8 0 am0 8 904v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 8 0 100 120 140 160 1 8 0 v d s =4v am0 8 905v1 bv d ss t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 -75 i d =1ma am0 8 906v1 r d s (on) 8 .0 7.5 7.0 0 20 i d (a) (m ? ) 10 3 0 8 .5 9.0 9.5 v g s =10v 40 am0 8 907v1
STD44N4LF6 electrical characteristics doc id 17171 rev 4 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =20v i d =40a 25 12 am0 8 90 8 v1 c 1000 100 10 0 20 v d s (v) (pf) 10 3 0 ci ss co ss cr ss am0 8 909v1 v g s (th) 0.6 0.4 0.2 0 t j (c) (norm) -25 0. 8 75 25 125 -75 1.0 1.2 i d =250 a am0 8 910v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 0 i d =20a v g s =10v am0 8 911v1 v s d 0 10 i s d (a) (v) 5 25 15 20 0 0.2 0.4 0.6 0. 8 1.0 t j =-55c t j =175c t j =25c 40 3 0 3 5 am0 8 912v1
test circuits STD44N4LF6 8/15 doc id 17171 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD44N4LF6 package mechanical data doc id 17171 rev 4 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and products status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STD44N4LF6 10/15 doc id 17171 rev 4 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STD44N4LF6 package mechanical data doc id 17171 rev 4 11/15 figure 19. dpak (to-252) drawing figure 20. dpak footprint (a) a. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
packaging mechanical data STD44N4LF6 12/15 doc id 17171 rev 4 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
STD44N4LF6 packaging mechanical data doc id 17171 rev 4 13/15 figure 21. tape for dpak (to-252) figure 22. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STD44N4LF6 14/15 doc id 17171 rev 4 6 revision history table 11. document revision history date revision changes 23-feb-2010 1 first release. 03-feb-2011 2 document status promoted from preliminary data to datasheet. 16-sep-2011 3 updated table 4: package mechanical data . minor text changes in cover page. 25-oct-2011 4 updated table 7: switching on/off (inductive load) and table 8: source drain diode . updated table 4: package mechanical data .
STD44N4LF6 doc id 17171 rev 4 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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